@InProceedings{Supelec937,
author = {Sergei Zhgoon and Ouarda Legrani and Omar Elmazria and Thierry Aubert and Meriem Elhosni and Hamza Mersni and Laetitia Lefevre and Sami Hage-Ali},
title = {{Potential of Al2O3/GaN/Sapphire layered structure for high temperature SAW sensors}},
year = {2015},
booktitle = {{Proceedings of Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA)}},
pages = {106-110},
month = {oct},
address = {Jinan (Chine)},
doi = {10.1109/SPAWDA.2015.7364451},
abstract = {This paper describes the investigation of the potential of
packageless structures for acoustic wave sensor applications
based on Al2O3/IDT/GaN/Sapphire structure. The finite elements
modeling predicts the possibility of acoustically isolated
waveguiding layer acoustic wave (WLAW) to propagate inside
this structure with very low displacement at the top surface
of the topmost Al2O3 layer. This layer serves as a protecting
layer against oxidation of internal layers as well as an
acoustically isolating layer, providing a mean for packageless
packaging of this structure. The modeling results get
confirmation in experiments with the precursor
IDT/GaN/Sapphire structure thus supporting hopes on the
predicted correct operation of the final
Al2O3/IDT/GaN/Sapphire structure.}
}