@Article{Supelec934,
author = {Alban Maertens and Samuel Margueron and Frédéric Genty and Sabina Kuprenaite and Adulfas Abrutis and Ouarda Legrani},
title = {{Elaboration of In2O3-ZnO Thin Films for Mid-Infrared Transparent Electrode Applications}},
journal = {Journal of Nanoelectronics and Optoelectronics},
year = {2015},
volume = {10},
pages = {1-6},
month = {jun},
doi = {10.1166/jno.2015.1765},
abstract = {In this paper, the effects of zinc proportion in structural,
electrical, and optical properties of In2O3 thin films were
investigated. 100 nm-thick crystallize indium\'ezinc\'eoxide (IZO)
thin films were grown by spray pyrolysis method on C-plan
sapphire, (001)-silicon, (001)-GaN template and YSZ
substrates. The electrical conductivity measurements show a
strong influence of the substrates. The best composition for 3
\'em Vertical Cavity Surface Emitting Laser (VCSEL) top contact
is found at 30% at. Zn with a maximum IR transparency of 80%.
The possibility to synthetize a p-type thin films was also
demonstrated.}
}