@InProceedings{Supelec675,
author = {Joel Jacquet and Yannick Abner and Manish Choffla and Claire-Astrid Paepegaey and Kinda Mheidly},
title = {{Thermal dissipation in a laser and semiconductor optical amplifier}},
year = {2010},
booktitle = {{Proceedings of SPIE: Optoelectronic Devices and Integration III (SPIE/COS Photonics Asia)}},
volume = {7847},
pages = {0I},
month = {oct},
address = {Beijing (China)},
url = {http://dx.doi.org/10.1117/12.870601},
doi = {10.1117/12.870601},
abstract = {In this paper, we calculate the thermal dissipation in
semiconductor Optical Amplifier. We investigate the effect of the
material composition, the number of wells, the type of structure
(Buried or Ridge), on the thermal resistance of the component and
try to extract some rules towards minimization of temperature
elevation. An increase in the number of quantum wells within the
same type of structure increased the thermal resistance but not
significantly. The type of source, a concentrated single source
or a distributed in the different wells, does not play a
significant role in the thermal resistance of a structure. The
difference between Pside up or down mounted device is clear and
well known. The variation of Separate Confinement Heterostructure
has, in both the Pup and Pdown structures, almost no effect on
the Rth. The influence of heat repartition inside the wells has
been evaluated. Finally the overall heat dissipation in the
optical module is calculated; the objective is to the decrease
the overall electrical consumption keeping the performances
required by the application.}
}