@InProceedings{Supelec593,
author = {Imen GAIED and Salima LASSOUED and Frédéric Genty and Nourreddine YACOUBI},
title = {{New Photothermal Deflection Method to determine Thermal Properties of Bulk Semiconductors}},
year = {2010},
booktitle = {{Defect and Diffusion Forum}},
publisher = {Trans Tech Publications},
volume = {297-301},
pages = {525-530},
url = {http://dx.doi.org/10.4028/www.scientific.net/DDF.297-301.525},
doi = {10.4028/www.scientific.net/DDF.297-301.525},
abstract = {In this paper, we present a new Photothermal Deflection Technique
(PTD) to determine thermal properties of bulk doped or undoped
semiconductor such as GaAs, GaSb, InAs, etc. The method proposed
here consists in covering the sample with a thin graphite layer
in order to increase the photothermal signal and to ovoid any
reflection on the sample surface. This method deals with the
analysis of the logarithm of amplitude and phase variation of the
photothermal signal versus square root modulation frequency where
the sample placed in air is heated by a modulated light beam
coming from a halogen lamp. So the best coincidence between
experimental curves and corresponding theoretical ones gives
simultaneously the best values of thermal conductivity and
thermal diffusivity of the sample. These obtained values are in
good agreement with those found in literature. The advantage of
applying this method in this way lies in its simplicity and its
sensibility to both thermal conductivity and thermal diffusivity.}
}