@InProceedings{Supelec591,
author = {Sameh ABROUG and Faycel SAADALLAH and Frédéric Genty and Nourreddine YACOUBI},
title = {{Investigation of Electrical and Optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and Photothermal Deflection Spectroscopy }},
year = {2009},
booktitle = {{Physics Procedia (Proceedings of JMSM 2008)}},
volume = {2},
number = {3},
pages = {787 - 795},
month = {nov},
address = {Hammamet (TUNISIE)},
url = {http://dx.doi.org/10.1016/j.phpro.2009.11.026},
doi = {doi:10.1016/j.phpro.2009.11.026},
abstract = {The aim of this work is to investigate the influence of Si-doping
on the optical, thermal and electrical properties of GaSb
epitaxial layers. Such an influence was quantified through
photoluminescence (PL), mirage effect (photothermal spectroscopy)
and Hall effect measurements. Several GaSb samples, grown by
Molecular Beam Epitaxy (MBE) on (100)-oriented GaAs
semiinsulating substrates, with different Si-doping levels
ranging from image up to image were tested. As a comparison, the
same measurements were also performed on a GaSb non intentionally
doped layer. The Hall effect data shows a monotonic decrease in
carrier mobility when the hole concentration increase.
The effect of band-to-band, band-impurity transitions on the PL
gap E0 and the influence of high impurity concentration on the PL
and absorption spectra have been also studied. Finally, the
optical absorption changes induced by Si-doping on GaSb samples
were investigated by photothermal deflection. It was shown that
this technique allows a very precise deduction of the real
interband gap energy of a semiconductor material as GaSb.
Thermal conductivities were also deduced from the photothermal
deflection measurements. The found values are very low due to the
thermal resistivity of the layer-substrate interface but also due
to the lattice-mismatch between GaSb epilayers and the GaAs
substrate. However, the contribution of the free carriers to the
thermal conductivity, with a high p-doping level (p>1019 cm-3),
could be highlighted.}
}