@InProceedings{Supelec590,
author = {Alexandru ZORILA and Joel Jacquet and Abdallah Ougazzaden and Frédéric Genty},
title = {{Modeling of AlN/GaN superlattices for integration in near-UV Distributed Bragg Reflectors}},
year = {2010},
booktitle = {{Proceedings of SPIE : Physics and Simulation of Optoelectronic Devices XVIII}},
volume = {7597},
month = {January},
editor = { Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski,},
address = {San Francisco, CA, USA},
organization = {SPIE},
url = {http://spie.org/x648.html\'eproduct_id=842074},
isbn = {9780819479938},
doi = {10.1117/12.842074},
abstract = {One of the main problem for the realization of high reflectivity
GaN-based Bragg mirrors operating in the near-UV wavelength range
is to limit the crack formation due to the lattice mismatch
between the different nitride compounds while keeping a large
refractive index contrast. Recent works have demonstrated that
the introduction of several AlN/GaN superlattices (SLs) in a
classical AlN/GaN quarter wavelength layers mirror structure
strongly improved the crystalline quality and therefore the
optical properties of such a mirror. In this work, several
AlN/GaN SLs were studied for their direct use as pseudo-alloy
layers pair material in a Bragg mirror. Such a configuration
should allow combining the limitation of cracks by SLs with the
improvement of the index contrast. First, the band structure of
different AlN/GaN SLs was simulated using a self-consistent
8-band-k.p Schrödinger-Poisson solver. Then, the influence of
surrounding layers such as AlN bulk ones on the band structure
were considered. Using miniband-to-miniband transitions deduced
from these calculations, refractive indices of these SLs were
finally estimated for the design of an optimized high reflective
Bragg mirror at 450 nm.}
}