@InProceedings{Supelec525,
author = {Adrian Iordachescu and Joel Jacquet},
title = {{Modeling of tunnel junctions for current injection in Vertical Cavity Surface Emitting Lasers (VCSELs)}},
year = {2009},
booktitle = {{Proceedings of SPIE : Physics and Simulation of Optoelectronic Devices XVII}},
volume = {7211},
number = {13},
pages = {1-12},
month = {Feb},
address = {San Jose, CA (USA)},
url = {http://dx.doi.org/10.1117/12.808468},
doi = {10.1117/12.808468},
abstract = {Tunnel junctions have been widely used in the fabrication of
Vertical Cavity Surface Emitting Lasers since it allows
fabrication of low electrical resistance as well as low optical
absorption Bragg mirrors. The basic idea is to inject holes
through a highly doped reverse biased n+/p+ tunnel junction. We
present in this paper a review of the different materials that
can be used for various wavelength applications ranging from UV
(GaN) to IR (GaSb). We have elaborated a new modelling tool
that
has been validated for homo-junctions. The results show that
the
injection efficiency is directly linked to the energy gap of
the
material and to the effective mass of the electrons and light
holes. The first important discussion is related to the
condition on doping levels to get the material degenerate. Low
band gap materials such as InAs or GaSb semiconductors are well
appropriate to realise tunnel junctions with moderate doping
levels. At the opposite large band-gap materials as GaN or AlN
require very high doping levels to reach the tunnelling
condition. GaSb based VCSELs emitting in the infrared region (2-
3 µm) can use very efficiently such electrical injection
scheme.
On the other side, it will be much less beneficial to use it
for
surface emitting laser emitting in the ultra violet wavelength
range. Comparison with published papers will be discussed as
well as preliminary work done in the case of hetero junctions.}
}