@Article{Supelec515,
author = {Arnaud Ducanchez and Laurent Cerutti and Pierre Grech and Frédéric Genty and Eric Tournié},
title = {{Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm}},
journal = {Electronics Letters},
year = {2009},
volume = {45},
number = {5},
pages = {265-266},
month = {February},
url = {http://dx.doi.org/10.1049/el:20090134},
doi = {10.1049/el:20090134},
abstract = {Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 µm at room temperature are reported. The whole structure was grown monolithically in one run by solid- source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 µs, 5 %) operation was obtained at room temperature for 35 µm-diameter devices with threshold current of 85 mA.}
}