@InProceedings{Supelec404,
author = {Delphine Wolfersberger and Cristian Dan and Naima Khelfaoui and Nicolas Fressengeas and Hervé Leblond},
title = {{Fast photorefractive self focusing in InP:Fe semiconductor at near infrared wavelengths }},
year = {2008},
booktitle = {{Proceedings of SPIE : Photon Management III}},
volume = {6994},
number = {09},
pages = {1-8},
month = {apr},
address = {Strasbourg (France)},
url = {http://dx.doi.org/10.1117/12.780032},
doi = {10.1117/12.780032},
abstract = {Self-trapping of optical beams in photorefractive (PR) materials
at telecommunications wavelengths has been studied at steady
state in insulators such as SBN [1] and in semiconductor InP:Fe
[2], CdTe [3]. PR self-focusing and soliton interactions in
semiconductors find interesting applications in optical
communications such as optical routing and interconnections
because of several advantages over insulators: their sensitivity
to near-infrared wavelengths and shorter response time.
Photorefractive self focusing in InP:Fe is characterized as a
function of beam intensity and temperature. Transient self
focusing is found to occur on two time scales for input
intensities of tens of W/cm2 (one on the order of tens of µs, one
on the order of milliseconds). A theory developed describes the
photorefractive self focusing in InP:Fe and confirmed by steady
state and transient regime measurements. PR associated phenomena
(bending and self focusing) are taking place in InP:Fe as fast as
a µs for intensities on the order of 10W/cm2 at 1.06 µm.
Currently we are conducting more experiments in order to estimate
the self focusing response time at 1.55µm, to clarify the
temporal dynamic of the self focusing and to build up a
demonstrator of fast optical routing by photorefractive spatial
solitons interactions.}
}